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SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—f RF = 3100MHz TO 3900MHz,
LOW-SIDE LO INJECTION
(Typical Application Circuit with tuning elements outlined in Table 1 , V CC = 4.75V to 5.25V, RF and LO ports are driven from 50 Ω
sources, P LO = -3dBm to +3dBm, P RF = -5dBm, f RF = 3100MHz to 3900MHz, f IF = 300MHz, f LO = 2800MHz to 3600MHz, f RF > f LO ,
T C = -40°C to +85°C. Typical values are for T C = +25°C, V CC = 5.0V, P LO = 0dBm, f RF = 3500MHz, f LO = 3200MHz, f IF = 300MHz.
All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)
PARAMETER
Small-Signal Conversion Gain
Gain Variation vs. Frequency
Conversion Gain Temperature
Coefficient
SYMBOL
G C
Δ G C
TC CG
CONDITIONS
T C = +25°C (Note 7)
f RF = 3450MHz to 3750MHz, any 100MHz
band
f RF = 3450MHz to 3750MHz, any 200MHz
band
T C = -40°C to +85°C
MIN
7.5
TYP
8.0
0.15
0.3
-0.012
MAX
8.5
UNITS
dB
dB
dB/°C
No blockers present
10.5
13.5
Single Sideband Noise Figure
Noise Figure Temperature
Coefficient
NF SSB
TC NF
f RF = 3500MHz, f IF = 300MHz, P LO = 0dBm,
V CC = +5.0V, T C = +25°C, no blockers present
f RF = 3100MHz to 3900MHz, single sideband,
no blockers present, T C = -40°C to +85°C
10.5
0.018
11.6
dB
dB/°C
+8dBm blocker tone applied to RF port,
Noise Figure Under Blocking
NF B
f RF = 3500MHz, f LO = 3200MHz,
f BLOCKER = 3750MHz, P LO = 0dBm,
18.7
21
dB
V CC = +5.0V, T C = +25°C (Note 8)
Input 1dB Compression Point
Third-Order Input Intercept Point
IP 1dB
IIP3
f RF = 3500MHz (Note 9)
f RF1 - f RF2 = 1MHz, P RF1 = P RF2 = -5dBm
(Note 7)
10
23
12
25
dBm
dBm
f RF = 3100MHz to 3900MHz,
IIP3 Variation with T C
f IF = 300MHz, f RF1 - f RF2 = 1MHz,
±0.3
dB
P RF1 = P RF2 = -5dBm, T C = -40°C to +85°C
2RF-2LO Spur Rejection
3RF-3LO Spur Rejection
2x2
3x3
f SPUR = f LO + 150MHz
f SPUR = f LO + 100MHz
P RF = -10dBm
P RF = -5dBm
P RF = -10dBm
P RF = -5dBm
60
55
78
68
69
64
86
76
dBc
dBc
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
RL RF
RL LO
Z IF
LO on and IF terminated into a matched
impedance
RF and IF terminated into a matched
impedance
Nominal differential impedance at the IC’s
IF outputs
20
16.5
200
dB
dB
Ω
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7
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MAX19996ETP+
功能描述:上下转换器 High-Gain 2GHz to 3.9GHz Downconv RoHS:否 制造商:Texas Instruments 产品:Down Converters 射频:52 MHz to 78 MHz 中频:300 MHz LO频率: 功率增益: P1dB: 工作电源电压:1.8 V, 3.3 V 工作电源电流:120 mA 最大功率耗散:1 W 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:PQFP-128
MAX19996ETP+T
功能描述:上下转换器 High-Gain 2GHz to 3.9GHz Downconv RoHS:否 制造商:Texas Instruments 产品:Down Converters 射频:52 MHz to 78 MHz 中频:300 MHz LO频率: 功率增益: P1dB: 工作电源电压:1.8 V, 3.3 V 工作电源电流:120 mA 最大功率耗散:1 W 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:PQFP-128
MAX19997
功能描述:上下转换器 RoHS:否 制造商:Texas Instruments 产品:Down Converters 射频:52 MHz to 78 MHz 中频:300 MHz LO频率: 功率增益: P1dB: 工作电源电压:1.8 V, 3.3 V 工作电源电流:120 mA 最大功率耗散:1 W 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:PQFP-128
MAX19997AETX+
功能描述:上下转换器 High-Gain 1.8GHz to 2.9GHz Downconv RoHS:否 制造商:Texas Instruments 产品:Down Converters 射频:52 MHz to 78 MHz 中频:300 MHz LO频率: 功率增益: P1dB: 工作电源电压:1.8 V, 3.3 V 工作电源电流:120 mA 最大功率耗散:1 W 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:PQFP-128
MAX19997AETX+T
功能描述:上下转换器 High-Gain 1.8GHz to 2.9GHz Downconv RoHS:否 制造商:Texas Instruments 产品:Down Converters 射频:52 MHz to 78 MHz 中频:300 MHz LO频率: 功率增益: P1dB: 工作电源电压:1.8 V, 3.3 V 工作电源电流:120 mA 最大功率耗散:1 W 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:PQFP-128
MAX19998AETP+
功能描述:上下转换器 High-Gain 2.3GHz to 4.5GHz Downconv RoHS:否 制造商:Texas Instruments 产品:Down Converters 射频:52 MHz to 78 MHz 中频:300 MHz LO频率: 功率增益: P1dB: 工作电源电压:1.8 V, 3.3 V 工作电源电流:120 mA 最大功率耗散:1 W 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:PQFP-128
MAX19998AETP+T
功能描述:上下转换器 High-Gain 2.3GHz to 4.5GHz Downconv RoHS:否 制造商:Texas Instruments 产品:Down Converters 射频:52 MHz to 78 MHz 中频:300 MHz LO频率: 功率增益: P1dB: 工作电源电压:1.8 V, 3.3 V 工作电源电流:120 mA 最大功率耗散:1 W 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:PQFP-128
MAX19998AEVKIT#
制造商:Maxim Integrated Products 功能描述:SIGE HIGH-LINEARITY 2300MHZ TO 4000MHZ DOWNCONVERSION MIXER - Boxed Product (Development Kits)